Semi-automatic cryogenic wafer prober for I-V characterisation of III-V photodetectors, especially InGaAs/InP pin-PDs, APDs, and SPADs. Wafer diameters: 76.2 mm (3 inch), 100 mm (4 inch); multi-project wafer compatibility; cryogenic cooling option, temperature range: 77 – 300 K.
Laborarory setup for electrooptical characterisation of III-V photodetectors on chip level, especially InGaAs/InP pin-PDs, APDs, and SPADs, with respect to dark-current / dark-count characteristics, spectral responsivity, photon-detection efficiency, afterpulsing etc.; chip size < 10 x 10 mm²; pulsed laser wavelength: 1550 nm; cryogenic cooling option, temperature range: 77 – 300 K.
